Resonance Raman scattering by optical phonons in GaAs near theband gap
- 15 February 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (6) , 2886-2891
- https://doi.org/10.1103/physrevb.35.2886
Abstract
We report the resonance of the first-order Raman scattering by longitudinal and transverse optical phonons in GaAs very near to the band gap at 100 K. The resonance enhancement observed at for deformation-potential (TO,LO) and Fröhlich-interaction-induced (LO) scattering is about 100 times larger than calculated for uncorrelated electron-hole pairs. The effect is attributed to the Coulomb correlation of discrete and continuum excitons and agrees with Martin’s calculation of these effects. The Faust-Henry coefficient is found to be nearly independent of frequency in the region of our measurements (C=-0.6±0.2).
Keywords
This publication has 28 references indexed in Scilit:
- Resonant Raman scattering and interference effects of LO phonons at the+gap of InPPhysical Review B, 1986
- Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAsPhysical Review B, 1985
- Interference between Allowed and Forbidden Raman Scattering by Longitudinal-Optical Phonons in GaAsPhysical Review Letters, 1983
- Mechanism of strong resonant 1LO Raman scatteringSolid State Communications, 1976
- Polariton theory of first-order Raman scattering in finite crystals for transparent and absorbing frequency regionsPhysical Review B, 1974
- Resonant First- and Second-Order Raman Scattering in GaPPhysical Review B, 1973
- Theory of the One-Phonon Resonance Raman EffectPhysical Review B, 1971
- Breakdown of Selection Rules in Resonance Raman ScatteringPhysical Review Letters, 1971
- Wave vector dependence and numerical value of the scattering efficiency for the resonant Raman effect in CdSSolid State Communications, 1970
- Resonant Raman effect in the indirect gap semiconductor gallium phosphideSolid State Communications, 1969