Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress
- 30 September 1999
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 43 (9) , 1677-1687
- https://doi.org/10.1016/s0038-1101(99)00144-6
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Anode hole injection and trapping in silicon dioxideJournal of Applied Physics, 1996
- Hole trapping, substrate currents, and breakdown in thin silicon dioxide films [ in FETs ]IEEE Electron Device Letters, 1995
- Model for the substrate hole current based on thermionic hole emission from the anode during Fowler–Nordheim electron tunneling in n-channel metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 1995
- Threshold energies of high-field-induced hole currents and positive charges in SiO2 layers of metal-oxide-semiconductor structuresJournal of Applied Physics, 1994
- Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolationIEEE Transactions on Electron Devices, 1994
- Theory of high-field electron transport and impact ionization in silicon dioxidePhysical Review B, 1994
- Modeling of the Hole Current Caused by Fowler-Nordheim Tunneling through Thin OxidesJapanese Journal of Applied Physics, 1994
- Model for the generation of positive charge at the Si-interface based on hot-hole injection from the anodePhysical Review B, 1985
- Lucky-drift mechanism for impact ionisation in semiconductorsJournal of Physics C: Solid State Physics, 1983
- Hole injection and transport in SiO2 films on SiApplied Physics Letters, 1975