Study of the composition of thin dielectrics grown on Si in a pure N2O ambient
- 16 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (12) , 1412-1414
- https://doi.org/10.1063/1.105323
Abstract
The composition of ultrathin oxides grown on both [100] and [111]Si substrates in pure N2O in a conventional furnace has been studied using Auger electron spectroscopy (AES) analysis, chemical etching, and electrical measurements. Results show a peak nitrogen concentration at the Si‐SiO2 interface which decreases from the Si‐SiO2 interface to the oxide surface. This nitrogen distribution is responsible for superior electrical properties of metal‐oxide‐semiconductor (MOS) devices with these films as gate dielectrics.Keywords
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