The critical thickness of an epilayer deposited on a semiconductor-on-insulator compliant substrate
- 22 March 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (12) , 1689-1691
- https://doi.org/10.1063/1.123656
Abstract
The critical thickness of an epilayer grown on a compliant substrate with the semiconductor-on-insulator configuration is investigated on the assumption that sliding boundary conditions hold along the interface between the thin crystal substrate and the amorphous underneath layer. An exact solution determining the critical thickness is formulated using both superposition and Fourier transformation. The results show that the critical thickness increases with the decreases in the thickness of the thin crystal substrate and the elastic constant of the insulator.Keywords
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