12 µm long edge-emitting quantum-dot laser
- 24 May 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (11) , 690-691
- https://doi.org/10.1049/el:20010488
Abstract
Highly reflecting Bragg mirrors in combination with GaInAs/AlGaAs laser structures with two layers of self-organised GaInAs quantum-dots are used to realise CW-operating edge-emitting microlasers with cavity lengths down to 12 µm. Owing to the large spacing of the longitudinal modes of 8.2 nm for 12 µm long lasers, quasi-singlemode operation is obtained.Keywords
This publication has 6 references indexed in Scilit:
- Quantum-dot microlasersElectronics Letters, 2000
- Design equations for the reflectivity of deep-etch distributed Bragg reflector gratingsJournal of Lightwave Technology, 2000
- Edge-emitting GaInAs-AlGaAs microlasersIEEE Photonics Technology Letters, 1999
- Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In 0.15 Ga 0.85 As quantum wellElectronics Letters, 1999
- Design studies for distributed Bragg reflectors for short-cavity edge-emitting lasersIEEE Journal of Quantum Electronics, 1997
- Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrorsIEEE Photonics Technology Letters, 1997