Comparative analysis of characteristics of Si, Mg, and undoped GaN
- 1 March 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 210 (4) , 505-510
- https://doi.org/10.1016/s0022-0248(99)00739-3
Abstract
No abstract availableFunding Information
- Ministry of Education (1998-016-D00005)
This publication has 17 references indexed in Scilit:
- The study on the growth and properties of Mg doped and Mg–Si codoped p-type GaNSolid-State Electronics, 1999
- Analysis of GaAs properties under biaxial tensile stressJournal of Vacuum Science & Technology A, 1998
- The effect of H2 on morphology evolution during GaN metalorganic chemical vapor depositionApplied Physics Letters, 1997
- Effect Of Mg, Zn, Si, And O On The Lattice Constant of Gallium Nitride Thin FilmsMRS Proceedings, 1997
- The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layerApplied Physics Letters, 1996
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on SapphireJapanese Journal of Applied Physics, 1996
- Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN filmsApplied Physics Letters, 1996
- Thermal stress in GaN epitaxial layers grown on sapphire substratesJournal of Applied Physics, 1995
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991