X-ray topographic study of twinning in InP crystals grown by the liquid encapsulated Czochralski technique
- 1 February 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 74 (2) , 362-374
- https://doi.org/10.1016/0022-0248(86)90126-0
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- X-ray topographic observation of dislocation generation and propagation in InP single crystal grown by the liquid-encapsulated Czochralski techniqueJournal of Applied Physics, 1983
- Growth and crystal quality of inp crystals by the liquid encapsulated czochralski techniqueJournal of Electronic Materials, 1981
- InP synthesis and LEC growth of twin-free crystalsJournal of Crystal Growth, 1981
- Liquid-encapsulated Czochralski growth of InP crystalsJournal of Crystal Growth, 1981
- Growth of Dislocation-Free Undoped InP CrystalsJapanese Journal of Applied Physics, 1980
- Stacking fault energy and ionicity of cubic III–V compoundsPhysica Status Solidi (a), 1978
- Impurity effect on the growth of dislocation-free InP single crystalsJournal of Applied Physics, 1976
- The growth of InP crystals from the meltJournal of Electronic Materials, 1974
- Growth peculiarities of gallium arsenide single crystalsSolid-State Electronics, 1963
- Indium antimonide—A review of its preparation, properties and device applicationsSolid-State Electronics, 1962