InGaAsP double heterostructure lasers (λ=1.3 μm) with etched reflectors
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (7) , 518-520
- https://doi.org/10.1063/1.91565
Abstract
Discrete InGaAsP double heterostructure lasers (λ=1.3 μm) have been fabricated by a novel batch process which incorporates chemically etched end reflectors. The etched‐mirror lasers have threshold current densities as low as 3.5 kA/cm2. The average threshold current density for the etched‐mirror lasers is approxiamtely 40% higher than for standard cleaved‐mirror devices fabricated from the same wafer. The laser fabrication process permits batch fabrication of a much wider variety of discrete laser geometries than conventional laser‐cleaving techniques.Keywords
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