2.5 kV ion-implanted p+n diodes in 6H-SiC
- 31 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10) , 1485-1488
- https://doi.org/10.1016/s0925-9635(97)00060-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Planar, ion implanted, high voltage 6H-SiC P-N junction diodesIEEE Electron Device Letters, 1995
- Boron-implanted 6H-SiC diodesApplied Physics Letters, 1993
- OBIC measurements on planar high-voltage p+ -n junctions with diamond-like carbon films as passivation layerApplied Surface Science, 1993
- High-voltage planar junctions investigated by the OBIC methodIEEE Transactions on Electron Devices, 1987
- Laser light spot mapping of depletion in power semiconductor devicesPhysica Status Solidi (a), 1979