Deep-level transient spectroscopy of AlGaAs and CuInSe2
- 31 December 1989
- journal article
- Published by Elsevier in Solar Cells
- Vol. 27 (1-4) , 347-356
- https://doi.org/10.1016/0379-6787(89)90043-4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- A new method of analysis of DLTS-spectraApplied Physics A, 1987
- The effect of deep states on the photovoltaic performance of CdZnS/CuInSe2 thin film devicesSolar Cells, 1986
- The relation of dominant deep levels in MOCVD AlxGa1−xAs with growth conditionsJournal of Crystal Growth, 1984
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974