A reflection high-energy electron diffraction study of the Si(111) surface during gas source molecular beam epitaxy
- 15 May 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (10) , 5168-5172
- https://doi.org/10.1063/1.350572
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Reflection-high-energy-electron-diffraction intensity oscillations of Si(111) during gas source molecular beam epitaxyApplied Physics Letters, 1992
- Surface reconstructions of Si(001) observed using reflection-high- energy-electron diffraction during molecular-beam epitaxial growth from disilaneApplied Physics Letters, 1991
- Gas source Si-MBEJournal of Crystal Growth, 1990
- Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4Journal of Vacuum Science & Technology A, 1990
- Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1Journal of Vacuum Science & Technology A, 1990
- Thermal and photostimulated reactions on Si2H6-adsorbed Si(100)2×1 surfaces: Mechanisms of Si film growth by atomic-layer epitaxyJournal of Vacuum Science & Technology B, 1989
- Selective growth condition in disilane gas source silicon molecular beam epitaxyApplied Physics Letters, 1988
- Intensity oscillations of reflection high-energy electron diffraction during silicon molecular beam epitaxial growthApplied Physics Letters, 1985
- Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfacesPhysical Review B, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983