The selectively grown permeable junction base transistor with a gate of highly carbon doped GaAs
- 1 March 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 136 (1-4) , 256-260
- https://doi.org/10.1016/0022-0248(94)90420-0
Abstract
No abstract availableKeywords
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