RF power amplifiers for wireless communications
- 25 June 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier modulePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High performance silicon bipolar power amplifier for 1.8 GHz applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Dual-band multi-mode power amplifier module using a third generation HBT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A single supply high performance PA MMIC for GSM handsets using quasi-enhancement mode PHEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Application of silicon-germanium technology for wireless handsets: a CDMA tri-mode chip setPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 50% efficiency InGaP/GaAs HBT power amplifier module for 1.95 GHz wide-band CDMA handsetsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A single supply miniature PA MMIC for multi-mode digital handsets using quasi-enhancement mode PHEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit techniqueIEEE Journal of Solid-State Circuits, 2000
- A small chip size 2 W, 62% efficient HBT MMIC for 3 V PCN applicationsIEEE Journal of Solid-State Circuits, 1998