A channel conductance measuring technique for determining the interface properties of a SiOInSb thin film transistor
- 1 February 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (2) , 393-401
- https://doi.org/10.1016/0038-1101(78)90269-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The effects of oxide traps on the MOS capacitanceIEEE Transactions on Electron Devices, 1965