Characteristics of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance
- 1 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 272 (1-4) , 123-126
- https://doi.org/10.1016/s0921-4526(99)00376-2
Abstract
No abstract availableKeywords
Funding Information
- Japan Society for the Promotion of Science
- Ministry of Education, Culture, Sports, Science and Technology
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- Quantum ballistic and adiabatic electron transport studied with quantum point contactsPhysical Review B, 1991
- Landauer’s conductance formula and its generalization to finite voltagesPhysical Review B, 1989
- Quantized conductance of point contacts in a two-dimensional electron gasPhysical Review Letters, 1988