Electrophotographic patterning of thin-film silicon on glass foil
- 1 October 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (10) , 418-420
- https://doi.org/10.1109/55.464803
Abstract
We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on /spl sim/50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.Keywords
This publication has 4 references indexed in Scilit:
- A 10 MWp a-Si:H module processing linePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequencyElectronics Letters, 1987
- Preparation of α-(Si.Ge):H Alloys by D.C. Glow Discharge DepositionMRS Proceedings, 1985
- Properties of microcrystalline P doped Si:H filmsJournal of Non-Crystalline Solids, 1983