Oxygen-nitrogen complexes in silicon formed by annealing in nitrogen
- 13 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (7) , 626-628
- https://doi.org/10.1063/1.100899
Abstract
Oxygen-nitrogen complexes with the shallow donor characteristic represented by the effective mass theory were formed in Czochralski silicon (CZ Si) annealed in a nitrogen atmosphere. By fitting the depth profile of this defect to a diffusion equation, we estimated the nitrogen diffusion coefficient to be about 2×10−6 cm2/s at 1270 °C. This value is 105 times larger than that indicated by previously reported data.Keywords
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