Suppression of phonon replica in the radiative recombination of an MBE-grown type-II Ge/Si quantum dot
- 1 May 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 321 (1-2) , 65-69
- https://doi.org/10.1016/s0040-6090(98)00445-3
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Improved luminescence quality with an asymmetric confinement potential in Si-based type-II quantum wells grown on a graded SiGe relaxed bufferJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Quantitative analysis of light emission from SiGe quantum wellsJournal of Crystal Growth, 1995
- Type I Band Alignment inQuantum Wells: Photoluminescence under Applied [110] and [100] Uniaxial StressPhysical Review Letters, 1995
- Interface intermixing influence on the electronic and optical properties of Si/Ge strained-layer superlatticesPhysical Review B, 1995
- Band-to-band transitions in strain-symmetrized, short-period Si/Ge superlatticesThin Solid Films, 1992
- Photogeneration and Transport of Carriers in Strained Si1-xGex/Si Quantum Well StructuresJapanese Journal of Applied Physics, 1992
- "Deep in the Glowing Text-Void": Translating Late CelanRepresentations, 1990
- Near-band-gap photoluminescence of Si-Ge alloysPhysical Review B, 1989
- Exponential distribution of the radiative decay rates induced by alloy scattering in an indirect-gap semiconductorPhysical Review B, 1982
- Effects of Uniaxial Stress on the Indirect Exciton Spectrum of SiliconPhysical Review B, 1971