Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy
- 1 February 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (2S) , 1026
- https://doi.org/10.1143/jjap.38.1026
Abstract
TlInGaAs quaternary layers are grown on InP substrates by gas-source molecular beam epitaxy (MBE) for the first time. The application of TlInGaAs was proposed for long-wavelength optical devices as well as temperature-insensitive wavelength laser diodes. During the growth, RHEED (reflection high-energy electron diffraction) patterns show (2×2) reconstructions. Successful growth of TlInGaAs is confirmed with X-ray diffraction measurements. PL emission is observed and the temperature variation of PL peak energy is as small as 0.1 meV/K.Keywords
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