Hot-electron-induced Electro-luminescence Of GaAs Field-effect And Bipolar Transistors
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 0_62-0_64
- https://doi.org/10.1109/sarnof.1994.655675
Abstract
No abstract availableKeywords
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- Light emission and burnout characteristics of GaAs power MESFET'sIEEE Transactions on Electron Devices, 1978