Correlation between breakdown voltage and structural properties of polycrystalline and heteroepitaxial CVD diamond films
- 30 April 1994
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 3 (4-6) , 951-956
- https://doi.org/10.1016/0925-9635(94)90307-7
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Device properties of homoepitaxially grown diamondPublished by Elsevier ,2003
- Thermal conductivity in molten-metal-etched diamond filmsApplied Physics Letters, 1993
- Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor DepositionJapanese Journal of Applied Physics, 1993
- Thermal conductivity and the microstructure of state-of-the-art chemical-vapor-deposited (CVD) diamondDiamond and Related Materials, 1993
- Heteroepitaxial diamond growth on (100) siliconDiamond and Related Materials, 1993
- Electrical conduction mechanisms in polycrystalline chemically vapour-deposited diamond filmsDiamond and Related Materials, 1993
- Studies of high field conduction in diamond for electron beam controlled switchingJournal of Applied Physics, 1992
- Dielectric strength of thin passivating diamond films for semiconductor devicesSurface and Coatings Technology, 1991
- Thin-film Al/diamond Schottky diode over 400-V breakdown voltageJournal of Applied Physics, 1990
- Diamonds in ScienceInterdisciplinary Science Reviews, 1989