The Contribution of Atomic Steps to Reflection High Energy Electron Diffraction from Semiconductor Surfaces
- 1 January 1988
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Surface disorder induced Kikuchi features in reflection high-energy electron diffraction patterns of static and growing GaAs(001) filmsJournal of Vacuum Science & Technology A, 1987
- Effects of diffraction conditions and processes on rheed intensity oscillations during the MBE growth of GaAsApplied Physics A, 1987
- Reflection high energy electron diffraction studies of epitaxial growth on semiconductor surfacesJournal of Vacuum Science & Technology A, 1986
- Diffraction from stepped surfaces: II. Arbitrary terrace distributionsSurface Science, 1985
- Diffraction from stepped surfaces: I. Reversible surfacesSurface Science, 1984
- Reflection electron microscopy (REM) of vicinal surfaces of fcc metalsUltramicroscopy, 1983
- On the phase transition between the (7 × 7) and (1 × 1) structures of silicon (111) surface studied by reflection electron microscopyUltramicroscopy, 1983
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983
- Comparative LEED and RHEED examination of stepped surfaces; Application to Cu(111) and GaAs(100) vicinal surfacesSurface Science, 1977
- Electron diffraction from a statistically rough surfaceSurface Science, 1973