Hydrogen passivation of impurities in GaP as studied by photoluminescence spectroscopy
- 15 July 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (2) , 891-895
- https://doi.org/10.1063/1.343516
Abstract
Hydrogen passivation of several types of impurities in GaP has been investigated by the use of low-temperature photoluminescence, secondary ion mass spectrometry, and electrical measurements. Exposure to atomic hydrogen has completely arrested optical activity of acceptor Zn, as detected by photoluminescence, whereas those of donor S and isoelectronic impurity N have not changed. Neutralization of the Zn acceptor is reversible in the sense that the original activity can be restored by a low-temperature anneal. These changes in luminescent activity are fully consistent with the results of electrical measurements and mass analysis.This publication has 18 references indexed in Scilit:
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