A note on ifβUP and βDOWN in I2L transistors
- 1 March 1982
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (3) , 251-252
- https://doi.org/10.1016/0038-1101(82)90116-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Beta measurement and beta requirement in I/sup 2/L gatesIEEE Journal of Solid-State Circuits, 1982
- An approximate model for the graded-base transistorSolid-State Electronics, 1981
- An analytical model for the low- emitter-impurity-concentration transistorSolid-State Electronics, 1978
- An analytical model for the epitaxial bipolar transistorSolid-State Electronics, 1977
- A theory of transistor cutoff frequency (fT) falloff at high current densitiesIRE Transactions on Electron Devices, 1962
- On the Variation of Junction-Transistor Current-Amplification Factor with Emitter CurrentProceedings of the IRE, 1954