Crystal growth and dislocation structure of gallium antimonide
- 1 March 1989
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 24 (3) , 275-281
- https://doi.org/10.1002/crat.2170240307
Abstract
Single crystals of GaSb have been grown by the Czochralski method under reducing conditions. Crystals were grown in the 〈100〉, 〈111〉, and 〈112〉 directions. The 〈111〉 growth direction was found to be the most suitable for the successful and reliable crystal growth. Dislocation densities in 〈111〉 oriented crystals were examined by chemical etching. The etch pits density in these crystals didn't exceed the value of 1 × 102 cm−2.Keywords
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