GaSb Single Crystal Growth in Direction
- 1 July 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (7R)
- https://doi.org/10.1143/jjap.21.1106
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- LEC Growth of GaSb Single Crystals Using Boric OxideJapanese Journal of Applied Physics, 1980
- Growth peculiarities of gallium arsenide single crystalsSolid-State Electronics, 1963
- Indium antimonide—A review of its preparation, properties and device applicationsSolid-State Electronics, 1962
- Growth of InSb Crystals in the Polar DirectionJournal of Applied Physics, 1960