Ion Implanted p-n Junctions in Near Intrinsic n-Type Silicon for Nuclear Particle Detectors

This publication has 4 references indexed in Scilit:

• MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPE
  Applied Physics Letters, 1970
• Influence of carrier diffusion effects on window thickness of semiconductor detectors
  Nuclear Instruments and Methods, 1970
• Improvements in the Orientation Effect Observed by Scanning Electron Microscopy
  Physica Status Solidi (b), 1968
• Kikuchi-like reflection patterns obtained with the scanning electron microscope
  Philosophical Magazine, 1967