Hot electron noise effects in buried channel MOSFETs
- 31 May 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (5) , 425-428
- https://doi.org/10.1016/0038-1101(81)90040-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Generation-recombination noise at 77°K in silicon bars and JFETsSolid-State Electronics, 1979
- Hot electron noise in n-channel JFETs between 150 and 300°KSolid-State Electronics, 1978
- Noise due to donors in n-channel silicon JFETsSolid-State Electronics, 1978