Calculation of the shear stress distribution in LEC gallium arsenide for different growth conditions
- 1 October 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 92 (3-4) , 479-488
- https://doi.org/10.1016/0022-0248(88)90033-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Mathematical modelling of the liquid encapsulated Czochralski growth of gallium arsenideJournal of Crystal Growth, 1987
- Mathematical modelling of the liquid encapsulated czochralski growth of gallium arsenideJournal of Crystal Growth, 1987
- The theory and practice of dislocation reduction in GaAs and InPJournal of Crystal Growth, 1984
- Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation DensityJapanese Journal of Applied Physics, 1984
- Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC TechniqueJapanese Journal of Applied Physics, 1984
- Effect of Ambient Gas on Undoped LEC GaAs CrystalJapanese Journal of Applied Physics, 1983
- Temperature profile and thermal stress calculations in GaAs crystals growing from the meltJournal of Crystal Growth, 1983
- Dislocation studies in 3-inch diameter liquid encapsulated Czochralski GaAsJournal of Crystal Growth, 1983