Quantum well electroabsorption modulators at 1.55 μm using single-step selective area chemical beam epitaxial growth
- 6 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (1) , 10-12
- https://doi.org/10.1063/1.107655
Abstract
We demonstrate a novel electroabsorption modulator operating at 1.55 μm fabricated by single-step selective area chemical beam epitaxy with no post-growth processing. The modulation depth is 14.5 dB for a voltage swing of 10 V. In addition, the modulator has a tunable absorption edge determined by the size of the growth mask opening.Keywords
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