Lateral current confinement by reverse-biased junctions in GaAs-AlxGa1−xAs DH lasers

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Abstract
Two methods are described for fabrication of a DH stripe‐geometry laser where lateral current confinement is obtained with reverse‐biased junctions on both sides of the active layer. Threshold current densities, comparable in values to optimum values achieved in other stripe geometry lasers, are obtained as a function of top channel widths for lasers with single and double current confinement. The lasers exhibit clean stable mode patterns with excellent linearity of the optical output power as a function of injection current. Lasers with channel widths ≲14 μm operate in the lowest‐order transverse mode in the junction plane for currents up to ∼two times the threshold (an output power of 16 mW per mirror).