Growth and Characterization of Thick GaAsN Epilayers and GaInNAs/GaAs Multiquantum Wells
- 1 November 1999
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 176 (1) , 279-283
- https://doi.org/10.1002/(sici)1521-396x(199911)176:1<279::aid-pssa279>3.0.co;2-z
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regimeApplied Physics Letters, 1999
- Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor depositionJournal of Crystal Growth, 1998
- Gas-source MBE of GaInNAs for long-wavelength laser diodesJournal of Crystal Growth, 1998
- GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxyApplied Physics Letters, 1998
- Luminescence of as-grown and thermally annealed GaAsN/GaAsApplied Physics Letters, 1998
- Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatmentsApplied Physics Letters, 1998
- GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodesIEEE Photonics Technology Letters, 1998