The growth of GaSb under microgravity conditions
- 30 June 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (3) , 538-550
- https://doi.org/10.1016/0022-0248(85)90360-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Direct synthesis and crystallization of GaSbJournal of Crystal Growth, 1981
- Vapor-Phase Growth of Te-Doped GaSbJapanese Journal of Applied Physics, 1981
- Influence of Mechanical Vibrations on Microscopic Growth Rates in GaSb Pulled CrystalsJapanese Journal of Applied Physics, 1981
- The liquid-phase epitaxial growth of low net donor concentration (5 × 1014-5 × 1015/cm3) GaSb for detector applications in the 1.3 - 1.6 µm regionIEEE Journal of Quantum Electronics, 1981
- Micron-Sized Facets in Pulled GaSb CrystalsJapanese Journal of Applied Physics, 1980
- On the Ultrasonic Wave-Introduced Crystal Pulling MethodJapanese Journal of Applied Physics, 1980
- Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μmApplied Physics Letters, 1980
- Observations of microfacets near irregularly remelted surfaces in pulled GaSb crystalsJournal of Crystal Growth, 1978
- Crystal Growth and Steady‐State Segregation under Zero Gravity: InSbJournal of the Electrochemical Society, 1975
- Diffusion and solubility of Zn in GaSbPhysica Status Solidi (a), 1974