Optical properties of GeOx films obtained by laser deposition and dc sputtering in a reactive atmosphere
- 1 March 1994
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 33 (7) , 1203-1208
- https://doi.org/10.1364/ao.33.001203
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 20 references indexed in Scilit:
- Optical properties of laser-deposited a-Ge films: a comparison with sputtered and e-beam-deposited filmsApplied Optics, 1992
- Properties of silicon dioxide films prepared by pulsed-laser ablationJournal of Applied Physics, 1992
- Laser ablation of Ge in an oxygen environment: plasma and film propertiesApplied Surface Science, 1992
- Direct observation of ions in laser plume onto the substrateApplied Physics Letters, 1991
- Pulsed-laser evaporation technique for deposition of thin films: Physics and theoretical modelPhysical Review B, 1990
- Ion Beam Processing of Optical Thin FilmsMRS Proceedings, 1989
- Memory phenomena in reactively-evaporated AlO x and GeO x thin filmsJournal of Materials Science Letters, 1987
- On the optical absorption edge in thin GeOX filmsPhysica Status Solidi (a), 1987
- Thermal changes of optical properties observed in some suboxide thin filmsJournal of Applied Physics, 1982
- Low-loss GeO_2 optical waveguide fabrication using low deposition rate rf sputteringApplied Optics, 1982