Resistivity of boron-doped polycrystalline silicon
- 11 April 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (15) , 1222-1224
- https://doi.org/10.1063/1.99164
Abstract
The doping dependence of the resistivity of polycrystalline silicon deposited by low-pressure chemical vapor deposition and implanted with boron is investigated. At doping concentrations <1018 cm−3, the resistivity is almost two orders of magnitude larger than that of crystalline silicon. At very large doping levels (=1020 cm−3), the resistivity is comparable to that of crystalline silicon though slightly higher. Boron segregation at grain boundaries is not observed for doping levels <1019 cm−3. At 1020 cm−3, boron segregation or additional clustering at grain boundaries causes a reversible change in the resistivity upon changing the annealing temperature.Keywords
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