Hydrogen passivation of shallow acceptors in p-type InP
- 1 February 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (2) , 87-90
- https://doi.org/10.1088/0268-1242/4/2/006
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Hydrogen In Crystalline SemiconductorsAnnual Review of Materials Science, 1988
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Hydrogen in crystalline silicon: A deep donor?Applied Physics Letters, 1987
- Interactions Between Hydrogen and Silicon Acceptors in p-Type GaAs:SiMRS Proceedings, 1987
- Photoluminescence Detection of Shallow Impurity Neutralization in Iii-V Compound SemiconductorsMRS Proceedings, 1987
- Hydrogen in III–V SemiconductorsMRS Proceedings, 1987
- Hydrogen plasma etching of CdTeJournal of Materials Science Letters, 1986
- The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindiumJournal of Electronic Materials, 1986
- Hydrogen passivation of shallow-acceptor impurities inp-type GaAsPhysical Review B, 1986
- Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal siliconPhysical Review B, 1985