Spectroscopic ellipsometry investigation of nickel silicide formation by rapid thermal process
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 16 (3) , 1820-1824
- https://doi.org/10.1116/1.581114
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Metal Silicides: Active elements of ULSI contactsJournal of Electronic Materials, 1996
- Activation energy for Ni2Si and NiSi formation measured over a wide range of ramp ratesThin Solid Films, 1996
- A parametric study of titanium silicide formation by rapid thermal processingJournal of Materials Research, 1996
- bilayers in salicide technology: electrical evaluationApplied Surface Science, 1995
- Ellipsometry as a tool for studying an intermetallic growthJournal of Physics: Condensed Matter, 1995
- Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSIIEEE Transactions on Electron Devices, 1995
- Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substratesThin Solid Films, 1994
- Ellipsometric measurements of the CoSi2 formation from very thin cobalt films on siliconJournal of Applied Physics, 1992
- Dielectric properties of single-crystalfrom 0.6 to 20 eVPhysical Review B, 1991
- Formation of titanium silicides and their refractive index measurementsPhysics Letters A, 1987