Theory of an intersubband infrared phototransistor with a nonuniform quantum well
- 1 July 1995
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 10 (7) , 997-1001
- https://doi.org/10.1088/0268-1242/10/7/016
Abstract
The effect of the nonuniformity of the dopant density in the quantum well of an intersubband single quantum-well infrared phototransistor (QWIPT) with triangular emitter and collector barriers is studied theoretically. It is shown that the nonuniformity of the dopant distribution in the plane of the QW, and in particular its random fluctuations, can significantly increase the dark current. However, the nonuniformity does not affect the photocurrent.Keywords
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