Parameters for point-defect diffusion and recombination
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 10 (9) , 1125-1131
- https://doi.org/10.1109/43.85758
Abstract
Point-defect kinetics is important for understanding and modeling dopant diffusion in silicon. The author describes models for point-defect transport and recombination used in SUPREM-IV, and does extensive fitting for the model parameters. The experimental data used are from experiments on oxidation-enhanced diffusion. Interstitial traps are shown to be critical for consistent agreement with experiment data. Point-defect parameters in lightly doped regions are extracted and fit to Arrhenius expressionsKeywords
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