Low-thermal-budget process modeling with the PREDICT computer program
- 1 March 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (3) , 285-293
- https://doi.org/10.1109/16.2452
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Process integration issues for a 0.25 μm n-channel metal-oxide-semiconductor technologyJournal of Vacuum Science & Technology A, 1986
- Transient enhanced diffusion during rapid thermal annealing of boron implanted siliconApplied Physics Letters, 1985
- PREDICT - A New Design Tool For Shallow Junction ProcessesPublished by SPIE-Intl Soc Optical Eng ,1985
- A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Modeling Rapid Thermal Diffusion of Arsenic and Boron in SiliconJournal of the Electrochemical Society, 1984
- Impurity Diffusion During RTAMRS Proceedings, 1984
- Annealing and Diffusion of Boron in Self-Implanted Silicon by Furnace and Electron Beam HeatingMRS Proceedings, 1984
- Rapid Annealing of SiliconMRS Proceedings, 1983
- The Influence of the Amorphous Phase on Boron Atom Distributions in Ion Implanted SiliconPublished by Springer Nature ,1973
- The isothermal annealing of boron implanted siliconRadiation Effects, 1971