Fourier transform photoluminescence excitation spectroscopy of medium-bandgap Hg1-xCdxTe and InSb
- 1 January 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (1S) , S75-S80
- https://doi.org/10.1088/0268-1242/8/1s/017
Abstract
The authors report for the first time on Fourier transform photoluminescence excitation spectroscopy in the mid-infrared covering the wavelength range between 1 and 5.5 mu m. By studying a medium-bandgap Hg0.66Cd0.34Te bulk crystal and InSb bulk material, direct evidence for the excitonic nature of the luminescence transitions has been found in both cases. In addition, the excitation spectra on MBE-grown Hg1-xCdxTe superlattices show the step-like density of states of the confined two-dimensional system.Keywords
This publication has 21 references indexed in Scilit:
- Optical spectroscopy of CdHgTe/CdTe quantum wells and superlatticesSemiconductor Science and Technology, 1993
- Carrier localization in low-bandgap Hg1-xCdxTe crystals, studied by photoluminescenceSemiconductor Science and Technology, 1991
- Far-infrared emission by resonant-polaron effects in narrow-band-gapTePhysical Review Letters, 1991
- Fourier transform infrared photoluminescence of Hg1-xCdxTeJournal of Crystal Growth, 1990
- Double Modulation Techniques In Fourier Transform Infrared PhotoluminescencePublished by SPIE-Intl Soc Optical Eng ,1989
- Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence SpectroscopyMaterials Science Forum, 1989
- High Performance Photoluminescence Spectroscopy using Fourier Transform InterferometryMRS Proceedings, 1989
- Growth in one operation of the (Cd, Hg)Te alloys of all compositions to study the alloy disorderJournal of Crystal Growth, 1985
- Excitation Spectroscopy on Silicon Using Color Center Lasers Study of the Thermally Induced P Line (0.767eV) DefectMRS Proceedings, 1985
- Luminescence from HgCdTe alloysJournal of Applied Physics, 1981