Annealing Effects to Electrode Pt / Ti for PZT
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The application of ferroelectrics such as SrTiO3 or PbZrxTi(1−x)O3 to the insulator of DRAM cell capacitors has been extensively studied. The bottom electrode Pt / Ti for these ferroelectrics needs to be thermally stable because of the crystallization process of ferroelectrics. By varying the annealing temperature from 400°Cto 800°C, we examined the annealing effects to the electrode Pt / Ti by SEM, TEM and in-situ XRD.Keywords
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