Behaviour of silicon pn junctions at temperatures between 4-2 and 300 ° K†
- 1 January 1968
- journal article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 24 (1) , 69-78
- https://doi.org/10.1080/00207216808938000
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- Negative resistance of silicon p-n junctions at 4·2°KSolid-State Electronics, 1962
- p-n junctions at very low temperaturesBritish Journal of Applied Physics, 1961
- Theory of Microplasma Instability in SiliconJournal of Applied Physics, 1961
- Silicon Diffused Junction “Avalanche” DiodesJournal of the Electrochemical Society, 1957
- Avalanche Breakdown in SiliconPhysical Review B, 1954