A novel 75 GHz InP HEMT dynamic divider
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 137-140
- https://doi.org/10.1109/gaas.1996.567827
Abstract
A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.Keywords
This publication has 12 references indexed in Scilit:
- 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A GaAs IC broadband variable ring oscillator and arbitrary integer dividerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Unlicensed millimeter wave communications. A new opportunity for MMIC technology at 60 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 17 dB gain, 0.1-70 GHz InP HEMT amplifier ICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Jitter in ring oscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 60-GHz HEMT-MMIC analog frequency divider by twoIEEE Journal of Solid-State Circuits, 1995
- Residual phase noise measurements of VHF, UHF, and microwave componentsIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 1994
- Digital dynamic frequency dividers for broadband application up to 60 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988
- A monolithic GaAs IC for heterodyne generation of RF signalsIEEE Transactions on Electron Devices, 1981