39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology

This publication has 10 references indexed in Scilit:

• 36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt Technology
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
• The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors
  IEEE Electron Device Letters, 1992
• AlInAs/GaInAs HBT IC technology
  IEEE Journal of Solid-State Circuits, 1991
• A Si bipolar 21-GHz/320-mW static frequency divider
  IEEE Journal of Solid-State Circuits, 1991
• An appropriate device figure of merit for bipolar CML
  IEEE Electron Device Letters, 1991
• An analytical maximum toggle frequency expression and its application to optimizing high-speed ECL frequency dividers
  IEEE Journal of Solid-State Circuits, 1990
• A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's
  IEEE Electron Device Letters, 1989
• Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technology
  IEEE Electron Device Letters, 1988
• GaAsGaAlAs heterojunction transistor for high frequency operation
  Solid-State Electronics, 1972
• The method of estimating delay in switching circuits and the figure of merit of a switching transistor
  IEEE Transactions on Electron Devices, 1964