Resist processes for hybrid (electron-beam/deep ultraviolet) lithography
- 1 November 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (6) , 3676-3683
- https://doi.org/10.1116/1.590390
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Modulated-temperature DSC (MT-DSC): a new technique for the extensive thermal characterization of complex chemically amplified systemsPublished by SPIE-Intl Soc Optical Eng ,1997
- A heavy ion implanted pocket 0.10 μm n-type metal–oxide–semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation processJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Development of two new positive DUV photoresists for use with direct-write e-beam lithographyPublished by SPIE-Intl Soc Optical Eng ,1996
- High resolution studies on Hoechst AZ PN114 chemically amplified resistMicroelectronic Engineering, 1996
- Optimization of CD control in DUV positive resists: influence of photoresist viscoelastic properties on PEB conditionsPublished by SPIE-Intl Soc Optical Eng ,1995
- Electron beam / DUV intra-level mix-and-match lithography for random logic 0.25μm CMOSMicroelectronic Engineering, 1995
- Evaluation of a positive tone chemically amplified deep UV resist for E-beam applicationsMicroelectronic Engineering, 1994
- Relationship between resist performance and diffusion in chemically amplified resist systemsPublished by SPIE-Intl Soc Optical Eng ,1993