Accurate measurement of the vacancy equilibrium concentration in silicon

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Abstract
A procedure is described which allows the measurement of the equilibrium concentration of vacancies in silicon at 800 °C. During a long lasting temperature treatment under inert and very clean conditions, the equilibrium concentration of the vacancies is established. According to the dominance of the Frank–Turnbull mechanism during platinum diffusion at 800 °C, the equilibrium concentration of vacancies C*V can then be determined from platinum diffusion profiles. A value of 4.1×1013 cm−3 at 800 °C for C*V is calculated using an analytical expression, which can be deduced from the equations of the Frank–Turnbull mechanism. For the vacancy diffusion coefficient in silicon, the result is 1.3×10−10 cm2 s−1. Numerical simulations show the self‐consistency of the vacancy parameters.