GaAs/In0.08Ga0.92As Double Heterojunction Bipolar Transistors with a Lattice-Mismatched Base
- 1 May 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (5A) , L421
- https://doi.org/10.1143/jjap.25.l421
Abstract
The critical layer thickness for misfit dislocation generation in a GaAs/InGas/GaAs DH structure is investigated experimentally. Introduction of compositionally graded layers with 300 Å thickness into hetero-interfaces is found to increase the critical layer thickness for misfit dislocation generation about three-fold. An optimum growth temperature of about 510°C is obtained by measuring the photoluminescence intensity of the DH structure. Using these results, a GaAs/In0.08Ga0.92As heterojunction bipolar transistor with a lattice mismatched InGaAs base is fabricated for the first time. The current gain of 20 is achieved at a collector current density of 2×104 A/cm2.Keywords
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