The growth and characterization of cadmium selenide and cadmium zinc selenide epilayers by MOVPE
- 1 March 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 128 (1-4) , 639-645
- https://doi.org/10.1016/s0022-0248(07)80015-7
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Blue-green laser diodesApplied Physics Letters, 1991
- Determination of the Point of the Zincblende-to-Wurtzite Structural Phase Transition in Cadmium Selenide CrystalsPhysica Status Solidi (a), 1991
- Excitonic and Raman properties of ZnSe/Zn1−xCdxSe strained-layer quantum wellsJournal of Applied Physics, 1991
- Molecular beam epitaxy of Zn1−xCdxSe epilayers and ZnSe/Zn1−xCdxSe superlatticesApplied Physics Letters, 1990
- Growth of cubic (zinc blende) CdSe by molecular beam epitaxyApplied Physics Letters, 1989
- Growth and assessment of CdS and CdSe layers produced on GaAs by metalorganic chemical vapour depositionJournal of Crystal Growth, 1988
- On the Mechanism of Growth of CdTe by Organometallic Vapor‐Phase EpitaxyJournal of the Electrochemical Society, 1987
- Blue luminescence of a ZnSe-ZnS0.1Se0.9 strained-layer superlattice on a GaAs substrate grown by low-pressure organometallic vapor phase epitaxyApplied Physics Letters, 1985
- Formation and elimination of surface ion milling defects in cadmium telluride, zinc sulphide and zinc selenideUltramicroscopy, 1985
- Organometallic growth of II–VI compoundsJournal of Crystal Growth, 1981