Short-channel pMOSTs in a high-resistivity silicon substrate. I. Analytical model
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (10) , 2268-2277
- https://doi.org/10.1109/16.158798
Abstract
No abstract availableKeywords
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